Replace conventional III-V materials as receiving devices to save cost
Provide better performance of receiver than III-V receiver, such as 25/50G avalanche photo diode
Provide more robust reliability such as non-hermetic application
Why Ge/Si dark current doesn't matter when the bandwidth is over 10Gbps
Over 10Gbps, the noise is mainly dominated by TIA instead of Ge/Si PIN/APD dark current. Hence the device performance will not be impacted by PIN/APD dark current.
SiFotonics's photo diode products have passed 5000hrs HTOL test at 175°C following the Telcordia GR-468-CORE standard. Over 1kk unit of PIN/APD devices have been shipped to the market.
Why Si Photonics
4x100G PIC is already realized across the Silicon Photonics platform
Provide 400G (PAM4) data center solution and 600G coherent solution per lambda.
