PRODUCTS

Ge/Si PIN PD

Germanium-on-silicon technology is the new driving technology to manufacture near-infrared (0.8um to 1.6um) photodiodes instead of InGaAs material for the fields of telecommunications, metro networks and FTTHs. This technology has an overwhelming superiority in mass production and uniformity, owing to compatibility with CMOS manufacturing process. After years’ research and development, SiFotonics Ge/Si PIN photodiodes have been optimized for best performance, including high responsivity, fast response, low capacitance and low bias voltage. The product portfolio covers speeds from 10 Gb/s to 25 Gb/s. All SiFotonics Ge/Si PD devices can be customized, including optimal wavelength, data rate, array size and array pitch.



PIN PD Product Series

Product Name

Data Rate

Active Diameter

Wavelength

Details

PD1503-50M3

10Gbps

50um

1260~1360nm

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PD1503-36M3

10Gbps

36um

1260~1360nm

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PD2005-20M3

25Gbps

20um

1260~1360nm

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PD2005-16M3

25Gbps

16um

1260~1360nm

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Multi-Channel PIN PD Product Series

Product Name

Data Rate

Active Diameter

Wavelength

Details

PD2045-20M3-xx

4x25Gbps

20um

1260~1360nm

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PD1541-36M3-xx

4x10Gbps

36um

1260~1360nm

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