PRODUCTS

Ge/Si APD

SiFotonics Ge/Si avalanche photodiodes utilize separate absorption, charge and multiplication (SACM) structure to achieve excellent absorption efficiency, high gain and low noise factor, simultaneously, benefitting from high responsivity of germanium to near-infrared light and low k-factor of Si as multiplication layer. SiFotonics focuses on designing state-of-the-art Ge/Si APDs featuring solidity, uniformity and superb reliability. Our 2.5 Gb/s and 10Gb/s Ge/Si APDs are mass-produced at standard CMOS foundry. SiFotonics Ge/Si APDs have lower temperature dependence owing to incorporating Si as avalanche material, compared with traditional InP or InAlAs materials, and is able to operating over a wide temperature range from -40°C to 85°C. All SiFotonics Ge/Si APDs can be customized, including optimal wavelength, data rate, array size and array pitch.



APD Product Series          

Product Name

Data Rate

Active Diameter

Wavelength

Details

AP2002-20S8

25Gbps

20um

830~1000nm

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AP2005-12M3

25Gbps

12um

1260~1360nm

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AP1503-20M3

10Gbps

20um

1260~1360nm

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AP1505-20L5

10Gbps

20um

1530-1565nm

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AP1505-20L7

10Gbps

20um

1575-1580nm

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AP1503-30S8

10Gbps

30um

830~1000nm

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Multi-Channel APD Product Series          

Product Name

Data Rate

Active Diameter

Wavelength

Details

AP1541-25M3

4x10Gbps

25um

1260~1360nm

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AP1545-25L5

4x10Gbps

25um

1530~1565nm

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AP2045-16M3

4x25Gbps

16um

1260~1360nm

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